IEEE - Institute of Electrical and Electronics Engineers, Inc. - Improved MODFET performance through ion implantation in the gate region

Author(s): C.S. Lam ; C.G. Fonstad
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1987
Volume: 8
Page(s): 563 - 565
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/EDL.1987.26729
Regular:

AlxGa1-xAs/GaAs modulation-doped FET's (MODFET's) are reported which utilize for the first time a shallow low-dose p-type implantation under the gate region to improve the source-drain breakdown... View More

Advertisement