IEEE - Institute of Electrical and Electronics Engineers, Inc. - The ALDMOST: A new power MOS transistor

Author(s): S.E.-D. Habib
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 1987
Volume: 8
Page(s): 257 - 259
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/EDL.1987.26622
Regular:

A new lateral power MOSFET structure, named the Accumulation LDMOST (ALDMOST), is proposed. It relies on creation of an accumulation layer along the surface of the drift region. This surface... View More

Advertisement