IEEE - Institute of Electrical and Electronics Engineers, Inc. - On the estimation of base transit time in AlGaAs/GaAs bipolar transistors

Author(s): C.M. Maziar ; M.S. Lundstrom
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 1987
Volume: 8
Page(s): 90 - 92
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/EDL.1987.26562
Regular:

Electron diffusion across quasi-neutral p-type base regions representative of those used in n-p-n AlGaAs/GaAs/GaAs heterojunction bipolar transistors is investigated. Monte-Carlo simulation... View More

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