IEEE - Institute of Electrical and Electronics Engineers, Inc. - Improvement of thin-gate oxide integrity using through-silicon-gate nitrogen ion implantation

Author(s): S. Haddad ; Mong-Song Liang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 February 1987
Volume: 8
Page(s): 58 - 60
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/EDL.1987.26551
Regular:

A simple and manufacturable technique to improve thin-gate oxide integrity using nitrogen implant through a polycrystalline-silicon (poly-Si) gate MOS structure is described. The Auger... View More

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