IEEE - Institute of Electrical and Electronics Engineers, Inc. - Group-IV heteroepitaxial films for optoelectronic applications

2009 International Semiconductor Device Research Symposium (ISDRS)

Author(s): Oehme, M. ; Werner, J. ; Kasper, E. ; Schulze, J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2009
Conference Location: College Park, MD, USA, USA
Conference Date: 9 December 2009
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6031-1
ISBN (Paper): 978-1-4244-6030-4
DOI: 10.1109/ISDRS.2009.5378336
Regular:

The molecular beam epitaxy (MBE) is a powerful technology for the manufacturing of group-IV heteroepitaxial films with doping concentrations ranging from 1014cm−3 to... View More

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