IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fermi level depinning of Ge Schottky contacts using single crystalline MgO

2009 International Semiconductor Device Research Symposium (ISDRS)

Author(s): Yi Zhou ; Wei Han ; Yong Wang ; Faxian Xiu ; Jin Zou ; Kawakami, R.K. ; Wang, K.L.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2009
Conference Location: College Park, MD, USA, USA
Conference Date: 9 December 2009
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6031-1
ISBN (Paper): 978-1-4244-6030-4
DOI: 10.1109/ISDRS.2009.5378328
Regular:

Fermi level (FL) pinning at the Ge valence band results in a high Schottky barrier height (SBH) for all metal/n-Ge contacts [1]. Even though a few groups have demonstrated depinning of the FL by... View More

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