IEEE - Institute of Electrical and Electronics Engineers, Inc. - Plasma doping and spike annealing technique for steep SDE formation in nano-scale MOSFET

2009 International Semiconductor Device Research Symposium (ISDRS)

Author(s): Miyata, T. ; Oshima, Y. ; Hokazono, A. ; Adachi, K. ; Miyano, K. ; Tsujii, H. ; Kawanaka, S. ; Inaba, S. ; Itani, T. ; Iinuma, T. ; Toyoshima, Y.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2009
Conference Location: College Park, MD, USA, USA
Conference Date: 9 December 2009
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6031-1
ISBN (Paper): 978-1-4244-6030-4
DOI: 10.1109/ISDRS.2009.5378311
Regular:

The significance of impurity profile design for Source/Drain Extension (SDE) is widely recognized for deeply scaled MOSFET. In this paper, novel SDE formation scheme in planar pMOSFET is discussed... View More

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