IEEE - Institute of Electrical and Electronics Engineers, Inc. - On the temporal behavior of dc and rf characteristics of InAs nanowire MISFET

2009 International Semiconductor Device Research Symposium (ISDRS)

Author(s): Otsuhata, Y. ; Waho, T. ; Blekker, K. ; Prost, W. ; Tegude, F.-J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2009
Conference Location: College Park, MD, USA, USA
Conference Date: 9 December 2009
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6031-1
ISBN (Paper): 978-1-4244-6030-4
DOI: 10.1109/ISDRS.2009.5378302
Regular:

Nanowire devices have drawn increasing attention as one of the most promising candidates for logic switches. Recently; III-V nanowire MISFETs have been fabricated exhibiting extremely high... View More

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