IEEE - Institute of Electrical and Electronics Engineers, Inc. - Investigating the BJT-like behavior of MOSFETs in ultra-deep-submicron CMOS technologies with significant gate current

2009 International Semiconductor Device Research Symposium (ISDRS)

Author(s): Bohannon, E. ; Washburn, C. ; Mukund, P.R.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2009
Conference Location: College Park, MD, USA, USA
Conference Date: 9 December 2009
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6031-1
ISBN (Paper): 978-1-4244-6030-4
DOI: 10.1109/ISDRS.2009.5378269
Regular:

As CMOS has moved into the nanoscale regime, direct tunneling of carriers through the thin gate oxide has resulted in non-negligible gate current. This current increases exponentially with... View More

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