IEEE - Institute of Electrical and Electronics Engineers, Inc. - Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drain

2009 International Semiconductor Device Research Symposium (ISDRS)

Author(s): Shao-Ming Koh ; Sinha, M. ; Yi Tong ; Hock-Chun Chin ; Wei-Wei Fang ; Xingui Zhang ; Chee-Mang Ng ; Samudra, G. ; Yee-Chia Yeo
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2009
Conference Location: College Park, MD, USA, USA
Conference Date: 9 December 2009
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6031-1
ISBN (Paper): 978-1-4244-6030-4
DOI: 10.1109/ISDRS.2009.5378216
Regular:

Embedded Silicon-Carbon (e-Si:C) source/drain (S/D) stressor enhances n-FET drive current Ion, and is a much-needed strain engineering option for future logic technologies. However, carbon in Si... View More

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