IEEE - Institute of Electrical and Electronics Engineers, Inc. - Variation analysis of TiN FinFETs

2009 International Semiconductor Device Research Symposium (ISDRS)

Author(s): Endo, K. ; Matsukawa, T. ; Ishikawa, Y. ; Liu, Y.X. ; O'uchi, S. ; Sakamoto, K. ; Tsukada, J. ; Yamauchi, H. ; Masahara, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2009
Conference Location: College Park, MD, USA, USA
Conference Date: 9 December 2009
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6031-1
ISBN (Paper): 978-1-4244-6030-4
DOI: 10.1109/ISDRS.2009.5378198
Regular:

Recently, extreme scaling of the MOSFET causes a significant increase in the variation and reduction in CMOS circuit stability. Double-gate (DG) FinFETs with metal-gates (MGs) have been recognized... View More

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