IEEE - Institute of Electrical and Electronics Engineers, Inc. - Structural and electrical properties of InN nanowires grown by chemical vapor deposition

2009 International Semiconductor Device Research Symposium (ISDRS)

Author(s): Bin Quddus, E. ; Zhihua Cai ; Koley, G.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2009
Conference Location: College Park, MD, USA, USA
Conference Date: 9 December 2009
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6031-1
ISBN (Paper): 978-1-4244-6030-4
DOI: 10.1109/ISDRS.2009.5378188
Regular:

InN is one of the most interesting materials among all group III-V nitrides for semiconductor device and sensor applications due to its direct band gap in the infrared range, smallest effective... View More

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