IEEE - Institute of Electrical and Electronics Engineers, Inc. - Enhanced photo responsivity in nanowire-based photodetectors

2009 International Semiconductor Device Research Symposium (ISDRS)

Author(s): Roudsari, A.F. ; Saini, S.S. ; O, N. ; Anantram, M.P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2009
Conference Location: College Park, MD, USA, USA
Conference Date: 9 December 2009
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6031-1
ISBN (Paper): 978-1-4244-6030-4
DOI: 10.1109/ISDRS.2009.5378176
Regular:

SOI-MOS photodetectors inherit their low power consumption, low leakage current and high speed of operation from the SOI substrate. The mechanism of lateral bipolar action in these photodetectors... View More

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