IEEE - Institute of Electrical and Electronics Engineers, Inc. - High performance IGZO TFTs on steel: Device stability and circuit integration

2009 International Semiconductor Device Research Symposium (ISDRS)

Author(s): Khan, S.A. ; Hatalis, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2009
Conference Location: College Park, MD, USA, USA
Conference Date: 9 December 2009
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6031-1
ISBN (Paper): 978-1-4244-6030-4
DOI: 10.1109/ISDRS.2009.5378154
Regular:

Oxide-semiconductor based thin-film transistors (TFTs) have advanced tremendously off-late and provides an attractive alternative to silicon-based TFTs. They are usually wide-gap materials,... View More

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