IEEE - Institute of Electrical and Electronics Engineers, Inc. - Semiconductor-dielectric interfacial study using spectral-spatial photocurrent probes and 1/f noise probe in organic field effect transistors

2009 International Semiconductor Device Research Symposium (ISDRS)

Author(s): Zhang Jia ; Meric, I. ; Shepard, K. ; Kymissis, I.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2009
Conference Location: College Park, MD, USA, USA
Conference Date: 9 December 2009
Page(s): 1
ISBN (CD): 978-1-4244-6031-1
ISBN (Paper): 978-1-4244-6030-4
DOI: 10.1109/ISDRS.2009.5378133
Regular:

Organic Field Effect Transistors (OFETs) are sensitive to the chemistry of the gate dielectric/semiconductor boundary both during and after fabrication. In particular, surface states can be... View More

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