IEEE - Institute of Electrical and Electronics Engineers, Inc. - Gate bias characterization of CNT-TFT DNA sensors

2009 International Semiconductor Device Research Symposium (ISDRS)

Author(s): Aktas, O. ; Toral, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2009
Conference Location: College Park, MD, USA, USA
Conference Date: 9 December 2009
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6031-1
ISBN (Paper): 978-1-4244-6030-4
DOI: 10.1109/ISDRS.2009.5378116
Regular:

There have been numerous reports of CNT-TFT DNA sensors in the literature [1-3]. This work follows the approach in references [1,3] that use the change in the current of CNT-TFTs with DNA... View More

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