IEEE - Institute of Electrical and Electronics Engineers, Inc. - Two-dimensional model for the potential profile in a short channel Schottky barrier DG-FET

2009 International Semiconductor Device Research Symposium (ISDRS 2009)

Author(s): M. Schwarz ; M. Weidemann ; A. Kloes ; B. Iiguez
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2009
Conference Location: College Park, MD, USA
Conference Date: 9 December 2009
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6031-1
ISBN (Paper): 978-1-4244-6030-4
DOI: 10.1109/ISDRS.2009.5378092
Regular:

In here we present a way to calculate the electrostatic potential of Schottky barrier double-gate MOSFETs (SB-DG-MOSFET) in subthreshold region. Due to increasing source/drain (S/D) parasitic... View More

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