IEEE - Institute of Electrical and Electronics Engineers, Inc. - Mobility measurements in Gd silicate/TiN SOI and sSOI n-MOSFETs

2009 International Semiconductor Device Research Symposium (ISDRS)

Author(s): Schmidt, M. ; Gottlob, H.D.B. ; Buca, D. ; Mantl, S. ; Kurz, H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2009
Conference Location: College Park, MD, USA, USA
Conference Date: 9 December 2009
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6031-1
ISBN (Paper): 978-1-4244-6030-4
DOI: 10.1109/ISDRS.2009.5378082
Regular:

Future CMOS technology generations require novel materials in the front end of device fabrication to overcome physical limits of the classical silicon/silicon dioxide based system and to keep... View More

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