IEEE - Institute of Electrical and Electronics Engineers, Inc. - Surface-potential-based compact model of dynamically depleted SOI MOSFETs

2009 International Semiconductor Device Research Symposium (ISDRS)

Author(s): Yao, W. ; Wu, W. ; Gildenblat, G.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2009
Conference Location: College Park, MD, USA, USA
Conference Date: 9 December 2009
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6031-1
ISBN (Paper): 978-1-4244-6030-4
DOI: 10.1109/ISDRS.2009.5378081
Regular:

The transition between the partial depletion (PD) and full depletion (FD) modes of operation is encountered in modern SOI MOSFET with the reduced silicon film thickness. This effect is referred to... View More

Advertisement