IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fabrication and characterization of buried-gate fin and recess channel MOSFET for high performance and low GIDL current

2009 International Semiconductor Device Research Symposium (ISDRS)

Author(s): Jae Young Song ; Jong Pil Kim ; Sang Wan Kim ; Jeong-Hoon Oh ; Kyung-Chang Ryoo ; Min-Chul Sun ; Garam Kim ; Hyun Woo Kim ; Jisoo Chang ; Sunghun Jung ; Hyungcheol Shin ; Byung-Gook Park
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2009
Conference Location: College Park, MD, USA, USA
Conference Date: 9 December 2009
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6031-1
ISBN (Paper): 978-1-4244-6030-4
DOI: 10.1109/ISDRS.2009.5378069
Regular:

The fin type device has been considered as one of the most promising candidates in CMOS scaling because of excellent current drivability and good short-channel effect immunity. It is well known... View More

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