IEEE - Institute of Electrical and Electronics Engineers, Inc. - Numerical simulation of 4H-SiC deep and vacuum UV photodetectors

2009 International Semiconductor Device Research Symposium (ISDRS)

Author(s): Bolotnikov, A. ; Soloviev, S. ; Vert, A. ; Rowland, L. ; Sandvik, P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2009
Conference Location: College Park, MD, USA, USA
Conference Date: 9 December 2009
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6031-1
ISBN (Paper): 978-1-4244-6030-4
DOI: 10.1109/ISDRS.2009.5378050
Regular:

Silicon carbide (SiC) photo detectors (PD) have an intrinsic spectral response in ultraviolet (UV) range and require no additional blocking of unwanted visible and IR radiation. This makes them... View More

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