IEEE - Institute of Electrical and Electronics Engineers, Inc. - The impact of the breakdown of Ohm's law on switching delay due to reactive elements connected in series with a micro/nano-resistor

2009 International Semiconductor Device Research Symposium (ISDRS)

Author(s): Arora, V.K. ; Manaf bin Hashim, A. ; Chek, D. ; Saxena, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2009
Conference Location: College Park, MD, USA, USA
Conference Date: 9 December 2009
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6031-1
ISBN (Paper): 978-1-4244-6030-4
DOI: 10.1109/ISDRS.2009.5378044
Regular:

The transient effects in a nano/micro-scale channel are severely affected by the resistance blowup due to sublinear current-voltage characteristics leading to velocity and current saturation. This... View More

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