IEEE - Institute of Electrical and Electronics Engineers, Inc. - 3-State behavior in quantum dot gate FETs

2009 International Semiconductor Device Research Symposium (ISDRS)

Author(s): Jain, F. ; Karmakar, S. ; Alamoody, F. ; Suarez, E. ; Gogna, M. ; Pik-Yiu Chan ; Chandy, J. ; Miller, B. ; Heller, E.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2009
Conference Location: College Park, MD, USA, USA
Conference Date: 9 December 2009
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6031-1
ISBN (Paper): 978-1-4244-6030-4
DOI: 10.1109/ISDRS.2009.5378013
Regular:

Quantum dot (QD) gate Si FETs, exhibiting an intermediate state "i" in their transfer characteristics, were first reported in ISDRS-07 [1]. The "i" state is characterized by a low-current... View More

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