IEEE - Institute of Electrical and Electronics Engineers, Inc. - Optimum body thickness of (111)-oriented ultra-thin body double-gate MOSFETs with respect to quantum-calculated phonon-limited mobility

2009 International Semiconductor Device Research Symposium (ISDRS 2009)

Author(s): M. Poljak ; V. Jovanovic ; T. Suligoj
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2009
Conference Location: College Park, MD, USA
Conference Date: 9 December 2009
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6031-1
ISBN (Paper): 978-1-4244-6030-4
DOI: 10.1109/ISDRS.2009.5378010
Regular:

For the first time, mobility enhancement due to quantum confinement effects is reported in (III)-oriented UTB DG MOSFETs with TSi between 6 and 8 nm for Eeff of 1 and 0.3 MV/cm,... View More

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