IEEE - Institute of Electrical and Electronics Engineers, Inc. - Instabilities in oxide semiconductor transparent thin film transistors

2009 IEEE International Integrated Reliability Workshop (IRW)

Author(s): Conley, J.F.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2009
Conference Location: South Lake Tahoe, CA, USA, USA
Conference Date: 18 October 2009
Page(s): 50 - 55
ISBN (CD): 978-1-4244-3922-5
ISBN (Paper): 978-1-4244-3921-8
ISSN (Paper): 1930-8841
DOI: 10.1109/IRWS.2009.5383033
Regular:

New amorphous oxide semiconductor transparent thin film transistors (TTFTs) exhibit good mobility (5 to ≫50cm2/V-sec), are transparent, and can be processed at low temperatures. They show... View More

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