IEEE - Institute of Electrical and Electronics Engineers, Inc. - Impact of instrumental current scatter on fast Bias Temperature Instability testing

2009 IEEE International Integrated Reliability Workshop (IRW)

Author(s): Kerber, A. ; Zhao, K. ; Linder, B.P. ; Cartier, E.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2009
Conference Location: South Lake Tahoe, CA, USA, USA
Conference Date: 18 October 2009
Page(s): 70 - 72
ISBN (CD): 978-1-4244-3922-5
ISBN (Paper): 978-1-4244-3921-8
ISSN (Paper): 1930-8841
DOI: 10.1109/IRWS.2009.5383029
Regular:

To minimize charge relaxation during Bias Temperature Instability (BTI) tests, fast current sensing has become the mainstream methodology in recent years and fast source measurement units are now... View More

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