IEEE - Institute of Electrical and Electronics Engineers, Inc. - Self-compensating the effect of defect generation in advanced CMOS substrates

2009 IEEE International Integrated Reliability Workshop (IRW)

Author(s): Islam, A.E. ; Alam, M.A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2009
Conference Location: South Lake Tahoe, CA, USA, USA
Conference Date: 18 October 2009
Page(s): 97 - 101
ISBN (CD): 978-1-4244-3922-5
ISBN (Paper): 978-1-4244-3921-8
ISSN (Paper): 1930-8841
DOI: 10.1109/IRWS.2009.5383024
Regular:

Time-dependent degradation of transistor parameters is one of the major reliability concerns in current CMOS technologies. Transistor parameters, e.g. threshold voltage, drain current, etc. change... View More

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