IEEE - Institute of Electrical and Electronics Engineers, Inc. - 9 kV, 1 cm×1 cm SiC super gto technology development for pulse power

2009 IEEE Pulsed Power Conference (PPC)

Author(s): Agarwal, A. ; Capell, C. ; Zhang, Q. ; Richmond, J. ; Callanan, R. ; O'Loughlin, M. ; Burk, A. ; Melcher, J. ; Palmour, J. ; Temple, V. ; O'Brien, H. ; Scozzie, C.J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2009
Conference Location: Washington, DC, USA, USA
Conference Date: 28 June 2009
Page(s): 264 - 269
ISBN (CD): 978-1-4244-4065-8
ISBN (Paper): 978-1-4244-4064-1
DOI: 10.1109/PPC.2009.5386305
Regular:

Power devices made on Silicon Carbide (SiC) are expected to offer significant advantages over silicon due to the unique material properties. With the continuing improvement in both material... View More

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