IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Sensor to Detect Normal or Reverse Temperature Dependence in Nanoscale CMOS Circuits

2009 24th IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems (DFT)

Author(s): Wolpert, D. ; Ampadu, P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2009
Conference Location: Chicago, Illinois, USA, USA
Conference Date: 7 October 2009
Page(s): 193 - 201
ISBN (Paper): 978-0-7695-3839-6
ISSN (Paper): 1550-5774
DOI: 10.1109/DFT.2009.47
Regular:

The temperature dependence of MOSFET drain current varies with supply voltage. Two distinct voltage regions exist-a normal dependence (ND) region where an increase in temperature decreases drain... View More

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