IEEE - Institute of Electrical and Electronics Engineers, Inc. - Thermal annealing effect on the Mg doped AlGaN/GaN superlattice

2009 Asia Communications and Photonics conference and Exhibition (ACP 2009)

Author(s): Wang Baozhu ; An Shengbiao ; Wen Huanming ; Wu Ruihong ; Wang, Xiaojun ; Wang, Xiaoliang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2009
Conference Location: Shanghai, China, China
Conference Date: 2 November 2009
Volume: 2009-Supplement
Page(s): 1 - 6
ISBN (CD): 978-1-55752-877-3
Regular:

Mg-doped AlGaN/GaN superlattice has been grown by metalorganic chemical vapor deposition (MOCVD). Rapid thermal annealing (RTA) treament are carryied out on the samples under nitrogen as protect... View More

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