IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low-temperature Si/Si wafer bonding using boride treated surface

2009 Asia Communications and Photonics Conference and Exhibition (ACP 2009)

Author(s): Hailan Song ; Hui Huang ; Xiaomin Ren ; Wenjuan Wang ; Yongqing Huang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2009
Conference Location: Shanghai, China
Conference Date: 2 November 2009
Page(s): 1 - 2
ISBN (CD): 978-1-55752-877-3
DOI: 10.1364/ACP.2009.WL40
Regular:

An approach for Si/Si wafer bonding based on boride-solution treatment was presented. The bonding energy is higher than the Si fracture energy by annealing at 180°C. The properties of the bonded... View More

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