IEEE - Institute of Electrical and Electronics Engineers, Inc. - Four-point probe and FTIR characterization of bilayer films based on silicon annealed at 850°C

2009 6th International Conference on Electrical and Electronics Engineering

Author(s): L. Saci ; R. Mahamdi ; F. Mansour ; P. Temple-Boyer
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2009
Conference Location: Bursa, Turkey
Conference Date: 5 November 2009
ISBN (CD): 978-9944-89-818-8
ISBN (Paper): 978-1-4244-5106-7
DOI: 10.1109/ELECO.2009.5355239
Regular:

The present paper focuses on the study of electrical and physico-chemical properties of films deposited by Low Pressure Chemical Vapor Deposition or (LPCVD). These films are composed of two... View More

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