IEEE - Institute of Electrical and Electronics Engineers, Inc. - GaAs FET with a high mobility self-assembled planar nanowire channel on a (100) substrate

2009 67th Annual Device Research Conference (DRC)

Author(s): Fortuna, S.A. ; Xiuling Li
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2009
Conference Location: University Park, PA, USA, USA
Conference Date: 22 June 2009
Page(s): 19 - 20
ISBN (CD): 978-1-4244-3527-2
ISBN (Paper): 978-1-4244-3528-9
ISSN (CD): 1548-3770
DOI: 10.1109/DRC.2009.5354978
Regular:

We demonstrate for the first time, a metal-semiconductor field-effect transistor (MESFET) fabricated with a self-assembled and high mobility <110> GaAs planar nanowire (NW) channel. The... View More

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