IEEE - Institute of Electrical and Electronics Engineers, Inc. - Top-gated Ge-Si x Ge 1−x core-shell nanowire field-effect transistors with highly doped source and drain

2009 67th Annual Device Research Conference (DRC)

Author(s): Junghyo Nah ; Liu, E.-S. ; Varahramyan, K.M. ; Shahrjerdi, D. ; Banerjee, S.K. ; Tutuc, E.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2009
Conference Location: University Park, PA, USA, USA
Conference Date: 22 June 2009
Page(s): 15 - 16
ISBN (CD): 978-1-4244-3527-2
ISBN (Paper): 978-1-4244-3528-9
ISSN (CD): 1548-3770
DOI: 10.1109/DRC.2009.5354970
Regular:

Semiconductor (e.g. silicon, germanium) nanowires have gained interest as an attractive platform to fabricate field effect transistors devices because of their reduced short channel effects by... View More

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