IEEE - Institute of Electrical and Electronics Engineers, Inc. - InSb nanowire field-effect transistors — Electrical characterization and material analysis

2009 67th Annual Device Research Conference (DRC)

Author(s): Candebat, D. ; Zhao, Y. ; Sandow, C. ; Koshel, B. ; Yang, C. ; Appenzeller, J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2009
Conference Location: University Park, PA, USA, USA
Conference Date: 22 June 2009
Page(s): 13 - 14
ISBN (CD): 978-1-4244-3527-2
ISBN (Paper): 978-1-4244-3528-9
ISSN (CD): 1548-3770
DOI: 10.1109/DRC.2009.5354959
Regular:

With the smallest band gap and effective mass of known bulk semiconductors and an electron mobility at room-temperature in excess of 50,000 cm2/Vs [1], Indium-Antimonide (InSb) holds... View More

Advertisement