IEEE - Institute of Electrical and Electronics Engineers, Inc. - Gigahertz operation of epitaxial graphene transistors

2009 67th Annual Device Research Conference (DRC)

Author(s): K. Tahy ; D. Shilling ; T. Zimmermann ; H. Xing ; P. Fay ; Luxmi ; R.M. Feenstra ; D. Jena
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2009
Conference Location: University Park, PA, USA
Conference Date: 22 June 2009
Page(s): 203 - 204
ISBN (CD): 978-1-4244-3527-2
ISBN (Paper): 978-1-4244-3528-9
ISSN (CD): 1548-3770
ISSN (Paper): 1548-3770
DOI: 10.1109/DRC.2009.5354952
Regular:

A graphene FET with a 0.5 ¿m long gate an exceptional high power gain cut-off frequency fmax of 16 GHz is demonstrated. These preliminary results are very encouraging and demonstrate... View More

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