IEEE - Institute of Electrical and Electronics Engineers, Inc. - Short channel vertical transistors with excellent saturation characteristics

2009 67th Annual Device Research Conference (DRC)

Author(s): Moradi, M. ; Nathan, A. ; Haverinen, H.M. ; Jabbour, G.E.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2009
Conference Location: University Park, PA, USA, USA
Conference Date: 22 June 2009
Page(s): 171 - 173
ISBN (CD): 978-1-4244-3527-2
ISBN (Paper): 978-1-4244-3528-9
ISSN (CD): 1548-3770
DOI: 10.1109/DRC.2009.5354935
Regular:

The use of a vertical thin film transistor (VTFT) topology in the flat panel active matrix array, opens up a plethora of new high performance applications. The VTFT is small in footprint by virtue... View More

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