IEEE - Institute of Electrical and Electronics Engineers, Inc. - Bias and gate control of graphene spin valves

2009 67th Annual Device Research Conference (DRC)

Author(s): Wei Han ; Wang, W.H. ; Pi, K. ; McCreary, K.M. ; Bao, W. ; Yan Li ; Lau, C.N. ; Kawakami, R.K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2009
Conference Location: University Park, PA, USA, USA
Conference Date: 22 June 2009
Page(s): 39 - 40
ISBN (CD): 978-1-4244-3527-2
ISBN (Paper): 978-1-4244-3528-9
ISSN (CD): 1548-3770
DOI: 10.1109/DRC.2009.5354909
Regular:

We have fabricated and utilized bias current and gate voltage to control the room temperature (RT) single layer graphene (SLG) spin valves [1]. The SLG spin valves are fabricated by electron-beam... View More

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