IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electrical measurements of lateral spin transport in Si near a Si/SiO 2 interface
2009 67th Annual Device Research Conference (DRC)
| Author(s): | Hyuk-Jae Jang ; Biqin Huang ; Appelbaum, I. |
| Publisher: | IEEE - Institute of Electrical and Electronics Engineers, Inc. |
| Publication Date: | 1 June 2009 |
| Conference Location: | University Park, PA, USA, USA |
| Conference Date: | 22 June 2009 |
| Page(s): | 35 - 36 |
| ISBN (CD): | 978-1-4244-3527-2 |
| ISBN (Paper): | 978-1-4244-3528-9 |
| ISSN (CD): | 1548-3770 |
| DOI: | 10.1109/DRC.2009.5354907 |
Regular:
To integrate semiconductor spintronics into current MOSFET technology, it is important to realize lateral spin transport in silicon and study it near the semiconductor/oxide interface as well as... View More
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