IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electrical measurements of lateral spin transport in Si near a Si/SiO 2 interface

2009 67th Annual Device Research Conference (DRC)

Author(s): Hyuk-Jae Jang ; Biqin Huang ; Appelbaum, I.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2009
Conference Location: University Park, PA, USA, USA
Conference Date: 22 June 2009
Page(s): 35 - 36
ISBN (CD): 978-1-4244-3527-2
ISBN (Paper): 978-1-4244-3528-9
ISSN (CD): 1548-3770
DOI: 10.1109/DRC.2009.5354907
Regular:

To integrate semiconductor spintronics into current MOSFET technology, it is important to realize lateral spin transport in silicon and study it near the semiconductor/oxide interface as well as... View More

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