IEEE - Institute of Electrical and Electronics Engineers, Inc. - Metal source/drain inversion-mode InP MOSFETs

2009 67th Annual Device Research Conference (DRC)

Author(s): Kim, S.H. ; Nakagawa, S. ; Haimoto, T. ; Nakane, R. ; Takenaka, M. ; Takagi, S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2009
Conference Location: University Park, PA, USA, USA
Conference Date: 22 June 2009
Page(s): 115 - 116
ISBN (CD): 978-1-4244-3527-2
ISBN (Paper): 978-1-4244-3528-9
ISSN (CD): 1548-3770
DOI: 10.1109/DRC.2009.5354866
Regular:

III-V compounds semiconductor channels have recently stirred a strong interest for further improving the performance of MOSFETs, because of their high bulk electron mobility. However, the main... View More

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