IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characterization of the piezoresistive effect and temperature coefficient of resistance in single crystalline silicon nanowires

2009 International Symposium on Micro-NanoMechatronics and Human Science (MHS)

Author(s): Tung Thanh Bui ; Dzung Viet Dao ; Nakamura, K. ; Toriyama, T. ; Sugiyama, S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2009
Conference Location: Nagoya, Japan, Japan
Conference Date: 9 November 2009
Page(s): 462 - 466
ISBN (CD): 978-1-4244-5095-4
ISBN (Paper): 978-1-4244-5094-7
DOI: 10.1109/MHS.2009.5351972
Regular:

This paper reports the design, fabrication and evaluation of piezoresistive effect of the top-down fabricated p-type <110> Si Nanowires (SiNWs). The SiNWs with the length of 2µm, thickness... View More

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