IEEE - Institute of Electrical and Electronics Engineers, Inc. - Active mode locking of InGaAsP Brewster angled semiconductor lasers

Author(s): J. Chang ; J. Vukusic
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 1987
Volume: 23
Page(s): 1,329 - 1,331
ISSN (Paper): 0018-9197
ISSN (Online): 1558-1713
DOI: 10.1109/JQE.1987.1073498
Regular:

Pulse durations of 10 ps have been obtained with 1.3 μm buried-heterostructure lasers fabricated using a multiple infrastructure. Mode locking has been achieved by polishing one facet... View More

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