IEEE - Institute of Electrical and Electronics Engineers, Inc. - Demonstration of low temperature CMOS devices on SiOG and SOI substrates

2009 IEEE International SOI Conference

Author(s): Williams, C.K. ; Couillard, J.G. ; Senawiratne, J. ; Manley, R.G. ; Meller, P.M. ; Shea, C.G. ; McCabe, A.M. ; Hirschman, K.D.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2009
Conference Location: Foster City, CA, USA, USA
Conference Date: 5 October 2009
Page(s): 1 - 2
ISBN (CD): 978-1-4244-5232-3
ISBN (Paper): 978-1-4244-4256-0
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.2009.5318791
Regular:

The fabrication and analysis of CMOS devices fabricated on Silicon-on-Glass (SiOG) and compared to SOI (SIMOX) substrates are presented. Key aspects of the low temperature (≪ 600 °C)... View More

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