IEEE - Institute of Electrical and Electronics Engineers, Inc. - SRAM cell design considerations for SOI technology

2009 IEEE International SOI Conference

Author(s): Tsu-Jae King Liu ; Changhwan Shin ; Min Hee Cho ; Xin Sun ; Nikolic, B. ; Nguyen, B.-Y.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2009
Conference Location: Foster City, CA, USA, USA
Conference Date: 5 October 2009
Page(s): 1 - 4
ISBN (CD): 978-1-4244-5232-3
ISBN (Paper): 978-1-4244-4256-0
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.2009.5318784
Regular:

The performance and threshold-voltage variability of vertical SOI FinFETs are compared against those of planar fully depleted SOI MOSFETs with thin buried oxide, via three-dimensional device... View More

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