IEEE - Institute of Electrical and Electronics Engineers, Inc. - Analyze of temporal and random variability of a 45nm SOI SRAM cell

2009 IEEE International SOI Conference

Author(s): Laplanche, Y.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2009
Conference Location: Foster City, CA, USA, USA
Conference Date: 5 October 2009
Page(s): 1 - 2
ISBN (CD): 978-1-4244-5232-3
ISBN (Paper): 978-1-4244-4256-0
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.2009.5318782
Regular:

This paper presents the analysis of a 45nm SOI SRAM cell variability including history effects and random variability. This leads to an accurate margin calculation.

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