IEEE - Institute of Electrical and Electronics Engineers, Inc. - SRAM yield enhancement with thin-BOX FD-SOI

2009 IEEE International SOI Conference

Author(s): Changhwan Shin ; Min Hee Cho ; Tsukamoto, Y. ; Nguyen, B.-Y. ; Nikolic, B. ; Tsu-Jae King Liu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2009
Conference Location: Foster City, CA, USA, USA
Conference Date: 5 October 2009
Page(s): 1 - 2
ISBN (CD): 978-1-4244-5232-3
ISBN (Paper): 978-1-4244-4256-0
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.2009.5318780
Regular:

The performance and yield of 6-T SRAM cells implemented in thin-BOX FD-SOI technology vs. bulk technology are compared via 3-dimensional (3D) atomistic process and device simulations and... View More

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