IEEE - Institute of Electrical and Electronics Engineers, Inc. - Germanium MOS transistors on sapphire and alumina platforms

2009 IEEE International SOI Conference

Author(s): Baine, P.T. ; Gamble, H.S. ; Armstrong, B.M. ; Mitchell, S.J.N. ; McNeill, D.W. ; Rainey, P.V. ; Low, Y.H. ; Low, Y.W. ; Tantraviwat, D.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2009
Conference Location: Foster City, CA, USA, USA
Conference Date: 5 October 2009
Page(s): 1 - 2
ISBN (CD): 978-1-4244-5232-3
ISBN (Paper): 978-1-4244-4256-0
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.2009.5318767
Regular:

A low temperature process has been established for the manufacture of self-aligned W gate germanium MOS transistors. Hole carrier mobility in the range 500 - 650... View More

Advertisement