IEEE - Institute of Electrical and Electronics Engineers, Inc. - Investigation of bias-dependent series resistances and barrier height in Double Gate Schottky MOSFETs

2009 IEEE International SOI Conference

Author(s): Bhandari, J. ; Vinet, M. ; Poiroux, T. ; Sallese, J.M. ; Previtali, B. ; Deleonibus, S. ; Ionescu, A.M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2009
Conference Location: Foster City, CA, USA, USA
Conference Date: 5 October 2009
Page(s): 1 - 2
ISBN (CD): 978-1-4244-5232-3
ISBN (Paper): 978-1-4244-4256-0
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.2009.5318738
Regular:

This work reports on gate voltage dependent source and drain series resistance and associated barrier height in modified Double Gate Schottky MOSFETs with dopant segregation. We show that in our... View More

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