IEEE - Institute of Electrical and Electronics Engineers, Inc. - SOI gated resistor: CMOS without junctions

2009 IEEE International SOI Conference

Author(s): Colinge, J.P. ; Lee, C.W. ; Afzalian, A. ; Dehdashti, N. ; Yan, R. ; Ferain, I. ; Razavi, P. ; O'Neill, B. ; Blake, A. ; White, M. ; Kelleher, A.M. ; McCarthy, B. ; Murphy, R.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2009
Conference Location: Foster City, CA, USA, USA
Conference Date: 5 October 2009
Page(s): 1 - 2
ISBN (CD): 978-1-4244-5232-3
ISBN (Paper): 978-1-4244-4256-0
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.2009.5318737
Regular:

We report the fabrication of junctionless SOI MOSFETs. Such devices greatly simplify processing thermal budget and behave as regular multigate SOI transistors.

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