IEEE - Institute of Electrical and Electronics Engineers, Inc. - First demonstration of heat dissipation improvement in CMOS technology using Silicon-On-Diamond (SOD) substrates

2009 IEEE International SOI Conference

Author(s): Mazellier, J.-P. ; Widiez, J. ; Andrieu, F. ; Lions, M. ; Saada, S. ; Hasegawa, M. ; Tsugawa, K. ; Brevard, L. ; Dechamp, J. ; Rabarot, M. ; Delaye, V. ; Cristoloveanu, S. ; Clavelier, L. ; Deleonibus, S. ; Bergonzo, P. ; Faynot, O.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2009
Conference Location: Foster City, CA, USA, USA
Conference Date: 5 October 2009
Page(s): 1 - 2
ISBN (CD): 978-1-4244-5232-3
ISBN (Paper): 978-1-4244-4256-0
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.2009.5318735
Regular:

We have fabricated Silicon-On-Diamond (SOD) substrates on which, for the first time, we integrated n and p Fully Depleted MOSFETs high-K/metal gate down to 200nm gate length. The devices show... View More

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